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Manufacturer	IXYS
Type of transistor	N-MOSFET
Technology	Polar™
Polarisation	unipolar
Drain-source voltage	500V
Drain current	3A
Power dissipation	70W
Case	TO263
Gate-source voltage	±30V
On-state resistance	2Ω
Mounting	SMD
Gate charge	9.3nC
Kind of package	tube
Kind of channel	enhancement
Reverse recovery time	400ns

IXTA3N50P

Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns

Specification