IXTH3N100P
Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns
Manufacturer: IXYS
Manufacturer part number:
IXTH3N100P
TME Symbol:
IXTH3N100P
Specification
Manufacturer | IXYS | |
Type of transistor | N-MOSFET | |
Polarisation | unipolar | |
Drain-source voltage | 1kV | |
Drain current | 3A | |
Power dissipation | 125W | |
Case | TO247-3 | |
Mounting | THT | |
Gate charge | 36nC | |
Kind of package | tube | |
Kind of channel | enhancement | |
Features of semiconductor devices | standard power mosfet | |
Reverse recovery time | 820ns |
Gross weight6.13 g
Certificates
See other products in this category: THT N channel transistors IXYS,
* IXTH3N100PNo. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 6.89 USDGross price for quantities from 1 pcs - 6.89 USD
Net price for quantities from 10 pcs - 5.46 USDGross price for quantities from 10 pcs - 5.46 USD
Net price for quantities from 30 pcs - 3.99 USDGross price for quantities from 30 pcs - 3.99 USD
Net price for quantities from 270 pcs - 3.87 USDGross price for quantities from 270 pcs - 3.87 USD
Packaging method by the manufacturerTube = 30 pcs