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Manufacturer	IXYS
Type of transistor	P-MOSFET
Technology	TrenchP™
Polarisation	unipolar
Drain-source voltage	-200V
Drain current	-68A
Power dissipation	568W
Case	TO247-3
Gate-source voltage	±15V
On-state resistance	55mΩ
Mounting	THT
Gate charge	380nC
Kind of package	tube
Kind of channel	enhancement
Reverse recovery time	245ns

IXTH68P20T

Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -68A; 568W; 245ns

Specification