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Manufacturer	IXYS
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	1kV
Drain current	3A
Power dissipation	125W
Case	TO220AB
Mounting	THT
Gate charge	36nC
Kind of package	tube
Kind of channel	enhancement
Features of semiconductor devices	standard power mosfet
Reverse recovery time	820ns

IXTP3N100P

Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 820ns

Specification