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IXTQ470P2

Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns


Manufacturer: IXYS

Manufacturer part number:
IXTQ470P2
TME Symbol:
IXTQ470P2

Specification

Manufacturer
IXYS
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
500V
Drain current
42A
Power dissipation
830W
Case
TO3P
On-state resistance
0.145Ω
Mounting
THT
Gate charge
88nC
Kind of package
tube
Kind of channel
enhancement
Features of semiconductor devices
standard power mosfet
Reverse recovery time
400ns
Gross weight5.5 g
Certificates
See other products in this category: THT N channel transistors IXYS,
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IXTQ470P2
0 in TME stock
Net price for quantities from 1 pcs - 8.45 USDGross price for quantities from 1 pcs - 8.45 USD
Net price for quantities from 3 pcs - 7.60 USDGross price for quantities from 3 pcs - 7.60 USD
Net price for quantities from 10 pcs - 6.72 USDGross price for quantities from 10 pcs - 6.72 USD
Net price for quantities from 30 pcs - 6.04 USDGross price for quantities from 30 pcs - 6.04 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.