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Manufacturer	IXYS
Type of transistor	P-MOSFET
Technology	PolarP™
Polarisation	unipolar
Drain-source voltage	-100V
Drain current	-100A
Power dissipation	312W
Case	ISOPLUS247™
Gate-source voltage	±20V
On-state resistance	15.4mΩ
Mounting	THT
Gate charge	240nC
Kind of package	tube
Kind of channel	enhancement
Reverse recovery time	176ns

IXTR170P10P

Transistor: P-MOSFET; PolarP™; unipolar; -100V; -100A; 312W; 176ns

Specification