IXTR200N10P
Transistor: N-MOSFET; Polar™; unipolar; 100V; 120A; 300W; 100ns
Manufacturer: IXYS
Manufacturer part number:
IXTR200N10P
TME Symbol:
IXTR200N10P
Specification
Manufacturer | IXYS | |
Type of transistor | N-MOSFET | |
Technology | HiPerFET™, Polar™ | |
Polarisation | unipolar | |
Drain-source voltage | 100V | |
Drain current | 120A | |
Power dissipation | 300W | |
Case | ISOPLUS247™ | |
Gate-source voltage | ±20V | |
On-state resistance | 8mΩ | |
Mounting | THT | |
Gate charge | 235nC | |
Kind of package | tube | |
Kind of channel | enhancement | |
Reverse recovery time | 100ns |
Gross weight4.785 g
Certificates
See other products in this category: THT N channel transistors IXYS,
* IXTR200N10PNo. of pieces (Multiplicity: 300)
0 in TME stock
Net price for quantities from 300 pcs - 15.56 USDGross price for quantities from 300 pcs - 15.56 USD