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IXTT10N100D

Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268


Manufacturer: IXYS

Manufacturer part number:
IXTT10N100D
TME Symbol:
IXTT10N100D

Specification

Manufacturer
IXYS
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
1kV
Drain current
10A
Pulsed drain current
20A
Power dissipation
400W
Case
TO268
Gate-source voltage
±30V
On-state resistance
1.4Ω
Mounting
SMD
Gate charge
130nC
Kind of package
tube
Kind of channel
depletion
Reverse recovery time
850ns
Gross weight4 g
Certificates
See other products in this category: SMD N channel transistors IXYS,
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IXTT10N100D
0 in TME stock
Net price for quantities from 1 pcs - 21.80 USDGross price for quantities from 1 pcs - 21.80 USD
Net price for quantities from 3 pcs - 19.95 USDGross price for quantities from 3 pcs - 19.95 USD
Net price for quantities from 10 pcs - 17.40 USDGross price for quantities from 10 pcs - 17.40 USD
Net price for quantities from 30 pcs - 15.77 USDGross price for quantities from 30 pcs - 15.77 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.