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Manufacturer	IXYS
Type of transistor	P-MOSFET
Technology	PolarP™
Polarisation	unipolar
Drain-source voltage	-500V
Drain current	-2A
Pulsed drain current	-6A
Power dissipation	58W
Case	TO252
Gate-source voltage	±20V
On-state resistance	4.2Ω
Mounting	SMD
Gate charge	11.9nC
Kind of channel	enhancement
Reverse recovery time	300ns

IXTY2P50PA

Transistor: P-MOSFET; PolarP™; unipolar; -500V; -2A; Idm: -6A; 58W

Specification