IXXP12N65B4D1
Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Manufacturer: IXYS
Manufacturer part number:
IXXP12N65B4D1
TME Symbol:
IXXP12N65B4D1
Specification
Manufacturer | IXYS | |
Type of transistor | IGBT | |
Technology | GenX4™, Trench, XPT™ | |
Collector-emitter voltage | 650V | |
Collector current | 12A | |
Power dissipation | 160W | |
Case | TO220-3 | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 70A | |
Mounting | THT | |
Gate charge | 34nC | |
Kind of package | tube | |
Turn-on time | 44ns | |
Turn-off time | 245ns |
Gross weight2 g
Certificates
See other products in this category: THT IGBT transistors IXYS,
* IXXP12N65B4D1No. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 3.48 USDGross price for quantities from 1 pcs - 3.48 USD
Net price for quantities from 3 pcs - 3.13 USDGross price for quantities from 3 pcs - 3.13 USD
Net price for quantities from 10 pcs - 2.77 USDGross price for quantities from 10 pcs - 2.77 USD
Net price for quantities from 50 pcs - 2.49 USDGross price for quantities from 50 pcs - 2.49 USD