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IXYH40N65B3D1

Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3


Manufacturer: IXYS

Manufacturer part number:
IXYH40N65B3D1
TME Symbol:
IXYH40N65B3D1

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
GenX3™, Planar, XPT™
Collector-emitter voltage
650V
Collector current
40A
Power dissipation
300W
Case
TO247-3
Gate-emitter voltage
±20V
Pulsed collector current
195A
Mounting
THT
Gate charge
68nC
Kind of package
tube
Turn-on time
57ns
Turn-off time
350ns
Gross weight6 g
Certificates
See other products in this category: THT IGBT transistors IXYS,
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IXYH40N65B3D1
0 in TME stock
Net price for quantities from 1 pcs - 8.45 USDGross price for quantities from 1 pcs - 8.45 USD
Net price for quantities from 3 pcs - 7.60 USDGross price for quantities from 3 pcs - 7.60 USD
Net price for quantities from 10 pcs - 6.71 USDGross price for quantities from 10 pcs - 6.71 USD
Net price for quantities from 30 pcs - 6.03 USDGross price for quantities from 30 pcs - 6.03 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.