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IXYK200N65B3

Transistor: IGBT; GenX3™; 650V; 200A; 1.56kW; TO264


Manufacturer: IXYS

Manufacturer part number:
IXYK200N65B3
TME Symbol:
IXYK200N65B3

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
GenX3™, Planar, XPT™
Collector-emitter voltage
650V
Collector current
200A
Power dissipation
1.56kW
Case
TO264
Gate-emitter voltage
±20V
Pulsed collector current
1.1kA
Mounting
THT
Gate charge
340nC
Kind of package
tube
Turn-on time
170ns
Turn-off time
700ns
Gross weight10 g
Certificates
See other products in this category: THT IGBT transistors IXYS,
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IXYK200N65B3
0 in TME stock
Net price for quantities from 1 pcs - 38.73 USDGross price for quantities from 1 pcs - 38.73 USD
Net price for quantities from 3 pcs - 35.01 USDGross price for quantities from 3 pcs - 35.01 USD
Net price for quantities from 10 pcs - 30.83 USDGross price for quantities from 10 pcs - 30.83 USD
Net price for quantities from 25 pcs - 27.68 USDGross price for quantities from 25 pcs - 27.68 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.