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IXYP20N65C3D1

Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3

Documentation EN
Product family

Manufacturer: IXYS

Manufacturer part number:
IXYP20N65C3D1
TME Symbol:
IXYP20N65C3D1

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
GenX3™, Planar, XPT™
Collector-emitter voltage
650V
Collector current
20A
Power dissipation
200W
Case
TO220-3
Gate-emitter voltage
±20V
Pulsed collector current
105A
Mounting
THT
Gate charge
30nC
Kind of package
tube
Turn-on time
51ns
Turn-off time
132ns
Gross weight2.073 g
Certificates
See other products in this category: THT IGBT transistors IXYS,
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IXYP20N65C3D1
187 in TME stock
Net price for quantities from 1 pcs - 4.60 USDGross price for quantities from 1 pcs - 4.60 USD
Net price for quantities from 10 pcs - 3.11 USDGross price for quantities from 10 pcs - 3.11 USD
Net price for quantities from 50 pcs - 2.43 USDGross price for quantities from 50 pcs - 2.43 USD
Net price for quantities from 100 pcs - 2.21 USDGross price for quantities from 100 pcs - 2.21 USD
Net price for quantities from 500 pcs - 2.11 USDGross price for quantities from 500 pcs - 2.11 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Hardly available product
Packaging method by the manufacturerTube = 50 pcs