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IXYP8N90C3D1

Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3

Documentation EN
Product family

Manufacturer: IXYS

Manufacturer part number:
IXYP8N90C3D1
TME Symbol:
IXYP8N90C3D1

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
GenX3™, Planar, XPT™
Collector-emitter voltage
900V
Collector current
8A
Power dissipation
125W
Case
TO220-3
Gate-emitter voltage
±20V
Pulsed collector current
48A
Mounting
THT
Gate charge
13.3nC
Kind of package
tube
Turn-on time
39ns
Turn-off time
238ns
Gross weight2.06 g
Certificates
See other products in this category: THT IGBT transistors IXYS,
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IXYP8N90C3D1
106 in TME stock
Net price for quantities from 1 pcs - 3.66 USDGross price for quantities from 1 pcs - 3.66 USD
Net price for quantities from 3 pcs - 3.29 USDGross price for quantities from 3 pcs - 3.29 USD
Net price for quantities from 10 pcs - 2.91 USDGross price for quantities from 10 pcs - 2.91 USD
Net price for quantities from 50 pcs - 2.62 USDGross price for quantities from 50 pcs - 2.62 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Product available till the stock lasts
Packaging method by the manufacturerTube = 50 pcs