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MDNA360UB2200PTED

Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw

Manufacturer: IXYS

Manufacturer part number:
MDNA360UB2200PTED
TME Symbol:
MDNA360UB2200PTED

Specification

Manufacturer
IXYS
Type of semiconductor module
IGBT
Semiconductor structure
diode/transistor
Topology
boost chopper, NTC thermistor, three-phase diode bridge
Max. off-state voltage
1.7kV
Collector current
135A
Case
E2-Pack
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Pulsed collector current
280A
Mechanical mounting
screw
Gross weight100 g
Certificates
See other products in this category: IGBT modules IXYS,
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MDNA360UB2200PTED
0 in TME stock
Net price for quantities from 1 pcs - 187.55 USDGross price for quantities from 1 pcs - 187.55 USD
No. of pieces (Multiplicity: 1)