MIEB101H1200EH
Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 630W
Manufacturer: IXYS
Manufacturer part number:
MIEB101H1200EH
TME Symbol:
MIEB101H1200EH
Specification
Manufacturer | IXYS | |
Type of semiconductor module | IGBT | |
Semiconductor structure | transistor/transistor | |
Topology | H-bridge | |
Max. off-state voltage | 1.2kV | |
Collector current | 128A | |
Case | E3-Pack | |
Application | motors, photovoltaics | |
Electrical mounting | Press-in PCB | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 200A | |
Power dissipation | 630W | |
Technology | Sonic FRD™, SPT+ | |
Mechanical mounting | screw |
Gross weight10 g
Certificates
See other products in this category: IGBT modules IXYS,
* MIEB101H1200EHNo. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 195.21 USDGross price for quantities from 1 pcs - 195.21 USD
Net price for quantities from 3 pcs - 172.24 USDGross price for quantities from 3 pcs - 172.24 USD
Net price for quantities from 5 pcs - 155.01 USDGross price for quantities from 5 pcs - 155.01 USD