MIEB101W1200EH
Module: IGBT; transistor/transistor; IGBT three-phase bridge
Manufacturer: IXYS
Manufacturer part number:
MIEB101W1200EH
TME Symbol:
MIEB101W1200EH
Specification
Manufacturer | IXYS | ||
Type of semiconductor module | IGBT | ||
Semiconductor structure | transistor/transistor | ||
Topology | IGBT three-phase bridge | ||
Max. off-state voltage | 1.2kV | ||
Collector current | 128A | ||
Case | E3-Pack | ||
Application | motors, photovoltaics | ||
Electrical mounting | Press-in PCB | ||
Gate-emitter voltage | ±20V | ||
Pulsed collector current | 200A | ||
Power dissipation | 630W | ||
Technology | Sonic FRD™, SPT+ | ||
Mechanical mounting | screw |
Gross weight10 g
Certificates
See other products in this category: IGBT modules IXYS,
* MIEB101W1200EHNo. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 242.83 USDGross price for quantities from 1 pcs - 242.83 USD
Net price for quantities from 3 pcs - 213.33 USDGross price for quantities from 3 pcs - 213.33 USD
Net price for quantities from 5 pcs - 190.64 USDGross price for quantities from 5 pcs - 190.64 USD