MIXA150R1200VA
Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 695W
Manufacturer: IXYS
Manufacturer part number:
MIXA150R1200VA
TME Symbol:
MIXA150R1200VA
Specification
Manufacturer | IXYS | ||
Type of semiconductor module | IGBT | ||
Semiconductor structure | diode/transistor | ||
Topology | boost chopper | ||
Max. off-state voltage | 1.2kV | ||
Collector current | 175A | ||
Case | V1-A-Pack | ||
Application | fans, for pump, motors, photovoltaics | ||
Electrical mounting | FASTON connectors | ||
Gate-emitter voltage | ±20V | ||
Pulsed collector current | 450A | ||
Power dissipation | 695W | ||
Technology | Sonic FRD™, XPT™ | ||
Mechanical mounting | screw |
Gross weight10 g
Certificates
See other products in this category: IGBT modules IXYS,
* MIXA150R1200VANo. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 42.13 USDGross price for quantities from 1 pcs - 42.13 USD
Net price for quantities from 3 pcs - 37.22 USDGross price for quantities from 3 pcs - 37.22 USD
Net price for quantities from 10 pcs - 33.45 USDGross price for quantities from 10 pcs - 33.45 USD
Net price for quantities from 24 pcs - 31.17 USDGross price for quantities from 24 pcs - 31.17 USD