MKI100-12F8
Module: IGBT; diode/transistor; H-bridge; Urmax: 1.2kV; Ic: 125A
Manufacturer: IXYS
Manufacturer part number:
MKI100-12F8
TME Symbol:
MKI100-12F8
Specification
Manufacturer | IXYS | |
Type of semiconductor module | IGBT | |
Semiconductor structure | diode/transistor | |
Topology | H-bridge | |
Max. off-state voltage | 1.2kV | |
Collector current | 125A | |
Case | E3-Pack | |
Electrical mounting | Press-in PCB | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 200A | |
Power dissipation | 640W | |
Technology | HiPerFRED™, NPT | |
Mechanical mounting | screw |
Gross weight300 g
Certificates
See other products in this category: IGBT modules IXYS,
* MKI100-12F8No. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 261.93 USDGross price for quantities from 1 pcs - 261.93 USD
Net price for quantities from 3 pcs - 236.43 USDGross price for quantities from 3 pcs - 236.43 USD
Net price for quantities from 5 pcs - 208.62 USDGross price for quantities from 5 pcs - 208.62 USD