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MSC012SMC120B4N

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 350A; 577W

Manufacturer: MICROCHIP TECHNOLOGY

Manufacturer part number:
MSC012SMC120B4N
TME Symbol:
MSC012SMC120B4N

Specification

Manufacturer
MICROCHIP TECHNOLOGY
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
1.2kV
Drain current
84A
Pulsed drain current
350A
Power dissipation
577W
Case
TO247-4-notch
On-state resistance
22mΩ
Mounting
THT
Gate charge
194nC
Kind of package
tube
Kind of channel
enhancement
Features of semiconductor devices
Kelvin terminal
Family
SMC
Gross weight1 g
Certificates

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand

See other products in this category: THT N channel transistors MICROCHIP TECHNOLOGY,
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MSC012SMC120B4N
0 in TME stock
Net price for quantities from 1 pcs - 42.27 USDGross price for quantities from 1 pcs - 42.27 USD
Net price for quantities from 3 pcs - 37.26 USDGross price for quantities from 3 pcs - 37.26 USD
Net price for quantities from 10 pcs - 33.56 USDGross price for quantities from 10 pcs - 33.56 USD
Net price for quantities from 30 pcs - 30.15 USDGross price for quantities from 30 pcs - 30.15 USD
No. of pieces (Multiplicity: 1)