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Manufacturer	MICROCHIP TECHNOLOGY
Type of transistor	N-MOSFET
Technology	SiC
Drain-source voltage	1.2kV
Drain current	68A
Power dissipation	338W
Case	TO263
Gate-source voltage	-10...23V
On-state resistance	50mΩ
Mounting	SMD
Gate charge	137nC
Kind of package	reel, tape
Kind of channel	enhancement
Manufacturer standard package	800pcs.

MSC040SMA120SDT/R

Transistor: N-MOSFET; SiC; 1.2kV; 68A; 338W; TO263

Specification

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand