MXP120A080FL-GE3
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W
Manufacturer: VISHAY
Manufacturer part number:
MXP120A080FL-GE3
TME Symbol:
MXP120A080FL-GE3
Specification
Manufacturer | VISHAY | |
Type of transistor | N-MOSFET | |
Technology | MaxSiC™, SiC | |
Polarisation | unipolar | |
Drain-source voltage | 1.2kV | |
Drain current | 18A | |
Pulsed drain current | 58A | |
Power dissipation | 56W | |
Case | TO247-4 | |
Gate-source voltage | -5...20V | |
On-state resistance | 0.175Ω | |
Mounting | THT | |
Gate charge | 47.3nC | |
Kind of package | tube | |
Kind of channel | enhancement | |
Features of semiconductor devices | Kelvin terminal |
Gross weight5 g
Certificates
See other products in this category: THT N channel transistors VISHAY,
* MXP120A080FL-GE3No. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 8.84 USDGross price for quantities from 1 pcs - 8.84 USD
Net price for quantities from 3 pcs - 8.23 USDGross price for quantities from 3 pcs - 8.23 USD
Net price for quantities from 5 pcs - 7.77 USDGross price for quantities from 5 pcs - 7.77 USD
Net price for quantities from 10 pcs - 7.66 USDGross price for quantities from 10 pcs - 7.66 USD