+1 500 000 products in offer

7000 packages per day

+300 000 clients from 150 countries

Quick Buy Favourites
Cart

No U.S. Customs – Order from TME with Confidence

Here you will find out more

NCP5109BDR2G

IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA


Manufacturer: ONSEMI

Manufacturer part number:
NCP5109BDR2G
TME Symbol:
NCP5109BDR2G

Specification

Manufacturer
ONSEMI
Type of integrated circuit
driver
Topology
IGBT half-bridge, MOSFET half-bridge
Kind of integrated circuit
gate driver, high-side, low-side
Case
SO8
Output current
-500...250mA
Mounting
SMD
Operating temperature
-40...125°C
Impulse rise time
160ns
Pulse fall time
75ns
Voltage class
200V
Supply voltage
  • 10...20V DC
Gross weight1 g
Certificates

WATCH VIDEO

See other products in this category: MOSFET/IGBT drivers ONSEMI,
*
NCP5109BDR2G
0 in TME stock
Net price for quantities from 1 pcs - 1.32 USDGross price for quantities from 1 pcs - 1.32 USD
Net price for quantities from 10 pcs - 0.92 USDGross price for quantities from 10 pcs - 0.92 USD
Net price for quantities from 25 pcs - 0.79 USDGross price for quantities from 25 pcs - 0.79 USD
Net price for quantities from 100 pcs - 0.65 USDGross price for quantities from 100 pcs - 0.65 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.