+1 500 000 products in offer

7000 packages per day

+300 000 clients from 150 countries

Quick Buy Favourites
Cart

No U.S. Customs – Order from TME with Confidence

Here you will find out more

NCP5111DR2G

IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA

Manufacturer: ONSEMI

Manufacturer part number:
NCP5111DR2G
TME Symbol:
NCP5111DR2G

Specification

Manufacturer
ONSEMI
Type of integrated circuit
driver
Topology
IGBT half-bridge, MOSFET half-bridge
Kind of integrated circuit
gate driver, high-/low-side
Case
SO8
Output current
-500...250mA
Number of channels
2
Mounting
SMD
Operating temperature
-40...125°C
Impulse rise time
160ns
Pulse fall time
75ns
Kind of package
reel, tape
Voltage class
600V
Protection
undervoltage UVP
Supply voltage
  • 10...20V DC
Gross weight0.1 g
Certificates

WATCH VIDEO

See other products in this category: MOSFET/IGBT drivers ONSEMI,
*
NCP5111DR2G
0 in TME stock
Net price for quantities from 1 pcs - 1.16 USDGross price for quantities from 1 pcs - 1.16 USD
Net price for quantities from 10 pcs - 0.85 USDGross price for quantities from 10 pcs - 0.85 USD
Net price for quantities from 25 pcs - 0.76 USDGross price for quantities from 25 pcs - 0.76 USD
Net price for quantities from 50 pcs - 0.74 USDGross price for quantities from 50 pcs - 0.74 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.