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NCP5181DR2G

IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A

Manufacturer: ONSEMI

Manufacturer part number:
NCP5181DR2G
TME Symbol:
NCP5181DR2G

Specification

Manufacturer
ONSEMI
Type of integrated circuit
driver
Topology
IGBT half-bridge, MOSFET half-bridge
Kind of integrated circuit
gate driver, high-/low-side
Case
SO8
Output current
-2.2...1.4A
Number of channels
2
Mounting
SMD
Operating temperature
-40...125°C
Impulse rise time
60ns
Pulse fall time
40ns
Kind of package
reel, tape
Voltage class
600V
Protection
undervoltage UVP
Supply voltage
  • 10...20V DC
Gross weight0.14 g
Certificates
See other products in this category: MOSFET/IGBT drivers ONSEMI,
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NCP5181DR2G
1668 in TME stock
Net price for quantities from 1 pcs - 1.51 USDGross price for quantities from 1 pcs - 1.51 USD
Net price for quantities from 5 pcs - 1.39 USDGross price for quantities from 5 pcs - 1.39 USD
Net price for quantities from 25 pcs - 1.34 USDGross price for quantities from 25 pcs - 1.34 USD
Net price for quantities from 100 pcs - 1.24 USDGross price for quantities from 100 pcs - 1.24 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Product available till the stock lasts
Packaging method by the manufacturerReel = 2 500 pcs