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NGTB35N65FL2WG

Transistor: IGBT; 650V; 35A; 150W; TO247-3

Product family

Manufacturer: ONSEMI

Manufacturer part number:
NGTB35N65FL2WG
TME Symbol:
NGTB35N65FL2WG

Specification

Manufacturer
ONSEMI
Type of transistor
IGBT
Collector-emitter voltage
650V
Collector current
35A
Power dissipation
150W
Case
TO247-3
Gate-emitter voltage
±20V
Pulsed collector current
120A
Mounting
THT
Gate charge
125nC
Kind of package
tube
Gross weight6.05 g
Certificates
See other products in this category: THT IGBT transistors ONSEMI,
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NGTB35N65FL2WG
16 in TME stock
Net price for quantities from 1 pcs - 6.34 USDGross price for quantities from 1 pcs - 6.34 USD
Net price for quantities from 10 pcs - 5.15 USDGross price for quantities from 10 pcs - 5.15 USD
Net price for quantities from 20 pcs - 4.31 USDGross price for quantities from 20 pcs - 4.31 USD
Net price for quantities from 30 pcs - 3.79 USDGross price for quantities from 30 pcs - 3.79 USD
Net price for quantities from 60 pcs - 3.66 USDGross price for quantities from 60 pcs - 3.66 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Packaging method by the manufacturerTube = 30 pcs