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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	650V
Drain current	40A
Pulsed drain current	100A
Power dissipation	313W
Case	D2PAK-3
Gate-source voltage	±20V
On-state resistance	82mΩ
Mounting	SMD
Gate charge	81nC
Kind of package	reel, tape
Kind of channel	enhancement

NTB082N65S3F

Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; D2PAK-3

Specification