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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	100V
Drain current	60A
Pulsed drain current	239A
Power dissipation	68W
Case	D2PAK-3
Gate-source voltage	±20V
On-state resistance	9mΩ
Mounting	SMD
Gate charge	23nC
Kind of package	reel, tape
Kind of channel	enhancement

NTBS9D0N10MC

Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 239A; 68W; D2PAK-3

Specification