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Manufacturer	NTE Electronics
Type of transistor	P-MOSFET
Polarisation	unipolar
Drain-source voltage	-200V
Drain current	-6.8A
Pulsed drain current	-44A
Power dissipation	125W
Case	TO220
Gate-source voltage	±20V
On-state resistance	0.5Ω
Mounting	THT
Kind of channel	enhancement

NTE2373

Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W; TO220

Specification