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Manufacturer	NTE Electronics
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	900V
Drain current	14A
Pulsed drain current	42A
Power dissipation	275W
Case	TO3P
Gate-source voltage	±30V
On-state resistance	0.63Ω
Mounting	THT
Kind of channel	enhancement

NTE2973

Transistor: N-MOSFET; unipolar; 900V; 14A; Idm: 42A; 275W; TO3P

Specification