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Manufacturer	ONSEMI
Type of transistor	P-MOSFET x2
Polarisation	unipolar
Drain-source voltage	-20V
Drain current	-4.1A
Pulsed drain current	-20A
Power dissipation	2.3W
Case	WDFN6
Gate-source voltage	±8V
On-state resistance	0.1Ω
Mounting	SMD
Gate charge	5.5nC
Kind of package	reel, tape
Kind of channel	enhancement

NTLJD3115PT1G

Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; Idm: -20A; 2.3W

Specification