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Manufacturer	ONSEMI
Type of transistor	P-MOSFET
Polarisation	unipolar
Drain-source voltage	-12V
Drain current	-7.7A
Pulsed drain current	-24A
Power dissipation	3.3W
Case	WDFN6
Gate-source voltage	±8V
On-state resistance	25mΩ
Mounting	SMD
Gate charge	12.8nC
Kind of package	reel, tape
Kind of channel	enhancement

NTLJS2103PTBG

Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6

Specification