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Manufacturer	ONSEMI
Type of transistor	N-MOSFET x2
Polarisation	unipolar
Drain-source voltage	100V
Drain current	24A
Pulsed drain current	349A
Power dissipation	26W
Case	WQFN12
Gate-source voltage	±20V
On-state resistance	25mΩ
Mounting	SMD
Gate charge	9nC
Kind of package	reel, tape
Kind of channel	enhancement

NTTFD022N10C

Transistor: N-MOSFET x2; unipolar; 100V; 24A; Idm: 349A; 26W; WQFN12

Specification