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NVJS4151PT1G

Transistor: P-MOSFET; unipolar; -20V; -4.1A; Idm: -13A; 1.2W; SC88

Product family

Manufacturer: ONSEMI

Manufacturer part number:
NVJS4151PT1G
TME Symbol:
NVJS4151PT1G

Specification

Manufacturer
ONSEMI
Type of transistor
P-MOSFET
Polarisation
unipolar
Drain-source voltage
-20V
Drain current
-4.1A
Pulsed drain current
-13A
Power dissipation
1.2W
Case
SC88
Gate-source voltage
±12V
On-state resistance
67mΩ
Mounting
SMD
Gate charge
10nC
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight0.01 g
Certificates
See other products in this category: SMD P channel transistors ONSEMI,
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NVJS4151PT1G
0 in TME stock
Net price for quantities from 1 pcs - 0.49 USDGross price for quantities from 1 pcs - 0.49 USD
Net price for quantities from 5 pcs - 0.43 USDGross price for quantities from 5 pcs - 0.43 USD
Net price for quantities from 10 pcs - 0.39 USDGross price for quantities from 10 pcs - 0.39 USD
Net price for quantities from 100 pcs - 0.32 USDGross price for quantities from 100 pcs - 0.32 USD
Net price for quantities from 500 pcs - 0.28 USDGross price for quantities from 500 pcs - 0.28 USD
Net price for quantities from 1000 pcs - 0.26 USDGross price for quantities from 1000 pcs - 0.26 USD
Net price for quantities from 3000 pcs - 0.25 USDGross price for quantities from 3000 pcs - 0.25 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.