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NVMD4N03R2G

Transistor: N-MOSFET x2; unipolar; 30V; 4A; Idm: 12A; 2W; SO8

Product family

Manufacturer: ONSEMI

Manufacturer part number:
NVMD4N03R2G
TME Symbol:
NVMD4N03R2G

Specification

Manufacturer
ONSEMI
Type of transistor
N-MOSFET x2
Polarisation
unipolar
Drain-source voltage
30V
Drain current
4A
Pulsed drain current
12A
Power dissipation
2W
Case
SO8
Gate-source voltage
±20V
On-state resistance
60mΩ
Mounting
SMD
Gate charge
8nC
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight0.1 g
Certificates
See other products in this category: Multi channel transistors ONSEMI,
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NVMD4N03R2G
0 in TME stock
Net price for quantities from 1 pcs - 1.76 USDGross price for quantities from 1 pcs - 1.76 USD
Net price for quantities from 10 pcs - 1.15 USDGross price for quantities from 10 pcs - 1.15 USD
Net price for quantities from 100 pcs - 0.80 USDGross price for quantities from 100 pcs - 0.80 USD
Net price for quantities from 500 pcs - 0.73 USDGross price for quantities from 500 pcs - 0.73 USD
No. of pieces (Multiplicity: 1)