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Manufacturer | NEXPERIA | |
Type of transistor | N/P-MOSFET | |
Technology | Trench | |
Polarisation | unipolar | |
Drain-source voltage | 30/-30V | |
Drain current | 590/-410mA | |
Pulsed drain current | -1.7...2.3A | |
Case | DFN1010B-6, SOT1216 | |
Gate-source voltage | ±8/±8V | |
On-state resistance | 670mΩ/1.4Ω | |
Mounting | SMD | |
Gate charge | 1.05/1.2nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement | |
Version | ESD |