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Manufacturer	NEXPERIA
Type of transistor	N/P-MOSFET
Technology	Trench
Polarisation	unipolar
Drain-source voltage	20/-20V
Drain current	400/-300mA
Pulsed drain current	-2...2.5A
Case	DFN1010B-6, SOT1216
Gate-source voltage	±8/±8V
On-state resistance	1/2.1Ω
Mounting	SMD
Gate charge	700pC/2.1nC
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

PMCXB900UEZ

Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA

Specification

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