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Manufacturer	NEXPERIA
Type of transistor	P-MOSFET x2
Technology	Trench
Polarisation	unipolar
Drain-source voltage	-20V
Drain current	-2.3A
Pulsed drain current	-14.4A
Case	DFN2020-6, HUSON6, SOT1118
Gate-source voltage	±8V
On-state resistance	95mΩ
Mounting	SMD
Gate charge	9.5nC
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

PMDPB58UPE,115

Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.3A; Idm: -14.4A

Specification

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