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Manufacturer | NEXPERIA | |
Type of transistor | P-MOSFET x2 | |
Technology | Trench | |
Polarisation | unipolar | |
Drain-source voltage | -30V | |
Drain current | -1.9A | |
Pulsed drain current | -11.6A | |
Case | DFN2020-6, HUSON6, SOT1118 | |
Gate-source voltage | ±12V | |
On-state resistance | 137mΩ | |
Mounting | SMD | |
Gate charge | 7.8nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement |