PMDPB80XP,115
Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.7A; Idm: -11A
Manufacturer: NEXPERIA
Manufacturer part number:
PMDPB80XP,115
TME Symbol:
PMDPB80XP.115
Specification
Manufacturer | NEXPERIA | |
Type of transistor | P-MOSFET x2 | |
Technology | Trench | |
Polarisation | unipolar | |
Drain-source voltage | -20V | |
Drain current | -1.7A | |
Pulsed drain current | -11A | |
Case | DFN2020-6, HUSON6, SOT1118 | |
Gate-source voltage | ±12V | |
On-state resistance | 148mΩ | |
Mounting | SMD | |
Gate charge | 8.6nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement |
Gross weight0.1 g
Certificates
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* PMDPB80XP,115No. of pieces (Multiplicity: 3 000)
0 in TME stock
Product for special order