PMDPB95XNE2X
Transistor: N-MOSFET x2; Trench; unipolar; 30V; 1.7A; Idm: 11A; ESD
Manufacturer: NEXPERIA
Manufacturer part number:
PMDPB95XNE2X
TME Symbol:
PMDPB95XNE2X
Specification
Manufacturer | NEXPERIA | |
Type of transistor | N-MOSFET x2 | |
Technology | Trench | |
Polarisation | unipolar | |
Drain-source voltage | 30V | |
Drain current | 1.7A | |
Pulsed drain current | 11A | |
Case | DFN2020-6, HUSON6, SOT1118 | |
Gate-source voltage | ±12V | |
On-state resistance | 0.17Ω | |
Mounting | SMD | |
Gate charge | 4.5nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement | |
Version | ESD |
Gross weight0.1 g
Certificates
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* PMDPB95XNE2XNo. of pieces (Multiplicity: 3 000)
0 in TME stock
Product for special order