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Manufacturer	NEXPERIA
Type of transistor	N/P-MOSFET
Technology	Trench
Polarisation	unipolar
Drain-source voltage	20/-20V
Drain current	500/-350mA
Pulsed drain current	-2.2...3.2A
Power dissipation	0.5W
Case	SOT666
Gate-source voltage	±8/±8V
On-state resistance	610mΩ/1.4Ω
Mounting	SMD
Gate charge	0.68/1.14nC
Kind of package	reel, tape
Kind of channel	enhancement

PMDT290UCEH

Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA

Specification

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