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Manufacturer	NEXPERIA
Type of transistor	P-MOSFET x2
Technology	Trench
Polarisation	unipolar
Drain-source voltage	-30V
Drain current	-0.26A
Pulsed drain current	-1.7A
Case	DFN1010B-6, SOT1216
Gate-source voltage	±8V
On-state resistance	2.4Ω
Mounting	SMD
Gate charge	1.2nC
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

PMDXB1200UPEZ

Transistor: P-MOSFET x2; Trench; unipolar; -30V; -260mA; Idm: -1.7A

Specification

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