PMDXB600UNEZ
Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Manufacturer: NEXPERIA
Manufacturer part number:
PMDXB600UNEZ
TME Symbol:
PMDXB600UNEZ
Specification
Manufacturer | NEXPERIA | |
Type of transistor | N-MOSFET x2 | |
Technology | Trench | |
Polarisation | unipolar | |
Drain-source voltage | 20V | |
Drain current | 0.4A | |
Pulsed drain current | 2.5A | |
Case | DFN1010B-6, SOT1216 | |
Gate-source voltage | ±8V | |
On-state resistance | 1Ω | |
Mounting | SMD | |
Gate charge | 0.7nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement | |
Version | ESD |
Gross weight0.1 g
Certificates
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* PMDXB600UNEZNo. of pieces (Multiplicity: 5 000)
0 in TME stock
Product for special order