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Manufacturer | NEXPERIA | |
Type of transistor | P-MOSFET x2 | |
Technology | Trench | |
Polarisation | unipolar | |
Drain-source voltage | -20V | |
Drain current | -0.3A | |
Pulsed drain current | -2A | |
Case | DFN1010B-6, SOT1216 | |
On-state resistance | 2.1Ω | |
Mounting | SMD | |
Gate charge | 2.1nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement | |
Version | ESD |