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PMDXB950UPEZ

Transistor: P-MOSFET x2; Trench; unipolar; -20V; -300mA; Idm: -2A

Manufacturer: NEXPERIA

Manufacturer part number:
PMDXB950UPEZ
TME Symbol:
PMDXB950UPEZ

Specification

Manufacturer
NEXPERIA
Type of transistor
P-MOSFET x2
Technology
Trench
Polarisation
unipolar
Drain-source voltage
-20V
Drain current
-0.3A
Pulsed drain current
-2A
Case
DFN1010B-6, SOT1216
On-state resistance
2.1Ω
Mounting
SMD
Gate charge
2.1nC
Kind of package
reel, tape
Kind of channel
enhancement
Version
ESD
Gross weight0.1 g
Certificates

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PMDXB950UPEZ
0 in TME stock
Net price for quantities from 1 pcs - 0.50 USDGross price for quantities from 1 pcs - 0.50 USD
Net price for quantities from 10 pcs - 0.33 USDGross price for quantities from 10 pcs - 0.33 USD
Net price for quantities from 100 pcs - 0.19 USDGross price for quantities from 100 pcs - 0.19 USD
No. of pieces (Multiplicity: 1)
Hardly available product