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Manufacturer	NEXPERIA
Type of transistor	P-MOSFET
Technology	Trench
Polarisation	unipolar
Drain-source voltage	-30V
Drain current	-2.9A
Pulsed drain current	-19A
Case	SC74, SOT457, TSOP6
Gate-source voltage	±20V
On-state resistance	67mΩ
Mounting	SMD
Gate charge	20nC
Kind of package	reel, tape
Kind of channel	enhancement

PMN50EPEX

Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A

Specification

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