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Manufacturer	NEXPERIA
Type of transistor	P-MOSFET
Technology	Trench
Polarisation	unipolar
Drain-source voltage	-30V
Drain current	-4.7A
Pulsed drain current	-30A
Case	DFN2020MD-6, SOT1220
Gate-source voltage	±25V
On-state resistance	34mΩ
Mounting	SMD
Gate charge	44nC
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

PMPB16EPX

Transistor: P-MOSFET; Trench; unipolar; -30V; -4.7A; Idm: -30A; ESD

Specification

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