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Manufacturer	NEXPERIA
Type of transistor	P-MOSFET
Technology	Trench
Polarisation	unipolar
Drain-source voltage	-20V
Drain current	-3.9A
Pulsed drain current	-25A
Case	DFN2020MD-6, SOT1220
Gate-source voltage	-12...8V
On-state resistance	52mΩ
Mounting	SMD
Gate charge	19nC
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

PMPB30XPEX

Transistor: P-MOSFET; Trench; unipolar; -20V; -3.9A; Idm: -25A; ESD

Specification

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