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Manufacturer	NEXPERIA
Type of transistor	P-MOSFET
Technology	Trench
Polarisation	unipolar
Drain-source voltage	-70V
Drain current	-1.5A
Pulsed drain current	-9.7A
Case	SC73, SOT223
Gate-source voltage	±20V
On-state resistance	0.25Ω
Mounting	SMD
Gate charge	15.9nC
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

PMT200EPEX

Transistor: P-MOSFET; Trench; unipolar; -70V; -1.5A; Idm: -9.7A

Specification

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