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Manufacturer	NEXPERIA
Type of transistor	P-MOSFET
Technology	Trench
Polarisation	unipolar
Drain-source voltage	-20V
Drain current	-3.1A
Pulsed drain current	-20A
Case	SOT23, TO236AB
Gate-source voltage	±12V
On-state resistance	53mΩ
Mounting	SMD
Gate charge	16nC
Kind of package	reel, tape
Kind of channel	enhancement

PMV30XPAR

Transistor: P-MOSFET; Trench; unipolar; -20V; -3.1A; Idm: -20A

Specification

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